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2N3397 - SILICON NPN TRANSISTORS

Download the 2N3397 datasheet PDF. This datasheet also covers the 2N3395 variant, as both devices belong to the same silicon npn transistors family and are provided as variant models within a single manufacturer datasheet.

General Description

The CENTRAL SEMICONDUCTOR 2N3395 series are silicon NPN transistors designed for low level, low noise amplifier applications.

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Note: The manufacturer provides a single datasheet file (2N3395-CentralSemiconductor.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
2N339 NPN General Purpose Amplifier Fairchild Semiconductor
2N339 N-P-N GROWN SILICON TRANSISTORS New Jersey Semi-Conductor
2N3390 NPN General Purpose Amplifier Fairchild Semiconductor
2N3390 (2N3390 - 2N3394) SILICON TRANSISTORS GE Solid State
2N3391 NPN General Purpose Amplifier Fairchild Semiconductor

Other Datasheets by Central Semiconductor

Part Number Description
2N3391A SILICON NPN TRANSISTOR
2N3392 SILICON NPN TRANSISTOR
2N3393 SILICON NPN TRANSISTOR
2N3395 SILICON NPN TRANSISTORS
2N3396 SILICON NPN TRANSISTORS

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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2N3395 2N3396 2N3397 2N3398 SILICON NPN TRANSISTORS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N3395 series are silicon NPN transistors designed for low level, low noise amplifier applications. MARKING: FULL PART NUMBER TO-92 CASE MAXIMUM RATINGS: (TA=25°C) Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Power Dissipation Operating and Storage Junction Temperature SYMBOL VCBO VCEO VEBO IC PD TJ, Tstg 25 25 5.0 100 360 -65 to +150 ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted) SYMBOL TEST CONDITIONS MIN ICBO VCB=25V IEBO VEB=5.0V BVCEO IC=1.0mA 25 hFE VCE=4.5V, IC=2.0mA (2N3395) 150 hFE VCE=4.5V, IC=2.0mA (2N3396) 90 hFE VCE=4.5V, IC=2.0mA (2N3397) 55 hFE VCE=4.