The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
2N3467 2N3468
SILICON PNP TRANSISTORS
w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N3467 and 2N3468 are silicon PNP switching transistors designed for core driver applications.
MARKING: FULL PART NUMBER
TO-39 CASE
MAXIMUM RATINGS: (TA=25°C) Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Power Dissipation Power Dissipation (TC=25°C) Operating and Storage Junction Temperature Thermal Resistance Thermal Resistance
SYMBOL VCBO VCEO VEBO IC PD PD TJ, Tstg ΘJA ΘJC
2N3467 40
2N3468 50
40 50
5.0
1.0
1.0
5.0
-65 to +200
175
35
ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted) 2N3467
SYMBOL TEST CONDITIONS
MIN MAX
ICBO
VCB=30V
- 100
ICBO
VCB=30V, TA=100°C
- 15
ICEV
VCE=30V, VBE=3.
2N3467 Datasheet
