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2N3495 Datasheet PNP Transistors

Manufacturer: Central Semiconductor

Overview: 2N3494 2N3495 SILICON PNP TRANSISTORS w w w. c e n t r a l s e m i .

This datasheet includes multiple variants, all published together in a single manufacturer document.

General Description

: The CENTRAL SEMICONDUCTOR 2N3494 and 2N3495 are silicon PNP transistors designed for general purpose amplifier and switching applications.

MARKING: FULL PART NUMBER TO-39 CASE MAXIMUM RATINGS: (TA=25°C) Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Power Dissipation Power Dissipation (TC=25°C) Operating and Storage Junction Temperature SYMBOL VCBO VCEO VEBO IC PD PD TJ, Tstg 2N3494 80 2N3495 120 80 120 4.5 100 0.6 3.0 -65 to +200 UNITS V V V mA W W °C ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted) 2N3494 SYMBOL TEST CONDITIONS MIN MAX ICBO VCB=50V (2N3494) - 100 ICBO VCB=90V (2N3495) -- IEBO VEB=3.0V - 25 BVCBO IC=10μA 80 - BVCEO IC=10mA 80 - BVEBO IE=10μA 4.5 - VCE(SAT) IC=10mA, IB=1.0mA - 0.3 VBE(SAT) IC=10mA, IB=1.0mA 0.6 0.9 hFE VCE=10V, IC=100μA 35 - hFE VCE=10V, IC=1.0mA 40 - hF

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