2N3714 Datasheet PDF | Central Semiconductor

Central Semiconductor 2N3714

The CENTRAL SEMICONDUCTOR 2N3713, 2N3714, 2N3715, and 2N3716 are silicon NPN power transistors manufactured by the epitaxial-base process, mounted in a hermetically sealed metal package designed for medium speed switching and amplifier applications.

Part No.	2N3714
Datasheet	2N3714 Download
Manufacturer	Central Semiconductor
Description	SILICON NPN TRANSISTORS
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DESCRIPTION

: MARKING: FULL PART NUMBER TO-3 CASE

MAXIMUM RATINGS

: (TC=25°C) Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Continuous Base Current Power Dissipation Operating and Storage Junction Temperature Thermal Resistance SYMBOL VCBO VCEO VEBO IC IB PD TJ, Tstg JC 2N3713 2N3715 80 2N3714 2N3716 100 60 80 7.0 10 4.0 150 -65 to +200 1.17

ELECTRICAL CHARACTERISTICS

: (TC=25°C unless otherwise noted) SYMBOL TEST CONDITIONS MIN TYP ICEV VCE=Rated VCBO, VBE=1.5V ICEV VCE=Rated VCEO, VBE=1.5V, TC=150°C IEBO VEB=7.0V BVCEO IC=200mA (2N3713, 2N3715) 60 BVCEO IC=200mA (2N3714, 2N3716) 80 VCE(SAT) IC=5.0A, IB=0.5A (2N3713, 2N3714) VCE(SAT) IC=5.0A, IB=0.5A (2N3715, 2N3716) VBE(SAT) IC=5.0A, IB=0.5A (2N3713, 2N3714) VBE(SAT) IC=5.0A, IB=0.5A (2N3715, 2N3716) VBE(ON) VCE=2.0V, IC=3.0A hFE VCE=2.0V, IC=1.0A (2N3713, 2N3714) 40 hFE VCE=2.0V, IC=1.0A (2N3715, 2N3716) 50 hFE VCE=2.0V, IC=3.0A (2N3713, 2N3714) 15 hFE VCE=2.0V, IC=3.0A (2N3715, 2N3716) 30 fT VCE=10V, IC=0.5A, f=1.0MHz 4.0 tr IC=5.0A, IB1=IB2=0.5A 0.4 ts IC=5.0A, IB1=IB2=0.5A 0.3 tf IC=5.0A, IB1=IB2=0.5A 0.4 MAX 1.0 10 5.0 1.0 0.

2N3714 Datasheets by Manufacturer

5 datasheets

Part Number	Manufacturer
2N3714	Inchange Semiconductor
2N3714	Toshiba
2N3714	Motorola
2N3714	Comset Semiconductor
2N3714	NTE