2N3738 Datasheet | Central Semiconductor

2N3738 2N3739 SILICON NPN POWER TRANSISTOR w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N3738 and 2N3739 are silicon epitaxial NPN power transistors designed for high voltage amplifier applications. MARKING: FULL PART NUMBER TO-66 CASE MAXIMUM RATINGS: (TC=25°C) Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Peak Collector Current Continuous Base Current Peak Base Current Power Dissipation Operating and Storage Junction Temperature Thermal Resistance SYMBOL VCBO VCEO VEBO IC ICM IB IBM PD TJ, Tstg JC 2N3738 250 2N3739 325 -65 to +200 UNITS V V V A A A A W °C °C/W ELECTRICAL CHARACTERISTICS: (TC=25°C unless otherwise noted) SYMBOL TEST CONDITIONS ICBO VCB=Rated VCBO ICEV VCE=250V, VBE=1.5V (2N3738) ICEV VCE=300V, VBE=1.5V (2N3739) ICEV VCE=125V, VBE=1.5V, TC=100°C (2N3738) ICEV VCE=200V, VBE=1.5V, TC=100°C (2N3739) ICEO VCE=125V (2N3738) ICEO VCE=200V (2N3739) IEBO VEB=6.0V BVCEO IC=5.0m A,...