DESCRIPTION
: The CENTRAL SEMICONDUCTOR MARKING: FULL PART NUMBER TO-5 CASE MAXIMUM RATINGS
: (TA=25°C) Collector-Base Voltage Collector-Emitter Voltage (Punch-through) Emitter-Base Voltage Continuous Collector Current Continuous Emitter Current Power Dissipation Operating Junction Temperature Storage Temperature SYMBOL VCBO Vpt VEBO IC IE PD TJ Tstg 25 24 12 100 100 150 -65 to +85 -65 to +100 ELECTRICAL CHARACTERISTICS
: (TA=25°C unless otherwise noted) SYMBOL TEST CONDITIONS MIN TYP ICBO VCB=12V ICBO VCB=12V, TA=80°C IEBO VEB=2.5V BVCBO IC=20μA 25 BVEBO IE=20μA 12 VCE(SAT) IC=12mA, IB=0.4mA VCE(SAT) IC=24mA, IB=1.0mA VBE(SAT) IC=12mA, IB=0.4mA VBE(SAT) IC=24mA, IB=1.0mA hFE VCE=0.15V, IC=12mA 30 hFE VCE=0.2V, IC=24mA 24 hfe VCB=6.0V, IC=1.0mA, f=1.0kHz 135 hie VCE=6.0V, IC=1.0mA, f=1.0kHz 4.0 hoe VCE=6.0V, IC=1.0mA, f=1.0kHz 50 hre VCE=6.0V, IC=1.0mA, f=1.0kHz 7.0 Cob VCB=6.0V, IE=0, f=1.0MHz fhfb VCB=6.0V, IE=1.0mA 4.0 MAX 5.0 90 2.5 0.15 0.20 0.35 0.40 20 UNITS V V V mA mA mW °C °C UN...
Central Semiconductor
