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2N4338 - N-Channel MOSFET

General Description

The CENTRAL SEMICONDUCTOR 2N4338 Series devices are silicon N-Channel JFETs mounted in a hermetically sealed metal case designed for low level, low noise amplifier applications.

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Other Datasheets by Central Semiconductor

Part Number Description
2N4339 N-Channel MOSFET
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The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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2N4338 2N4340 2N4339 2N4341 SILICON N-CHANNEL JFETS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N4338 Series devices are silicon N-Channel JFETs mounted in a hermetically sealed metal case designed for low level, low noise amplifier applications. MARKING: FULL PART NUMBER TO-18 CASE MAXIMUM RATINGS: (TA=25°C) Gate-Drain Voltage Gate-Source Voltage Drain-Source Voltage Gate Current Power Dissipation Operating and Storage Junction Temperature SYMBOL VGD VGS VDS IG PD TJ, Tstg ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted) 2N4338 2N4339 SYMBOL TEST CONDITIONS MIN MAX MIN MAX IGSS VGS=30V, VDS=0 - 0.1 - 0.1 IDSS VDS=15V, VGS=0 0.2 0.6 0.5 1.5 BVGSS IG=1.0μA 50 - 50 - VGS(OFF) |yfs| |yos| VDS=15V, ID=0.1μA VDS=15V, f=1.