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2N5116 - SILICON P-CHANNEL JFETS

Download the 2N5116 datasheet PDF. This datasheet also covers the 2N5114 variant, as both devices belong to the same silicon p-channel jfets family and are provided as variant models within a single manufacturer datasheet.

General Description

The CENTRAL SEMICONDUCTOR 2N5114, 2N5115, and 2N5116 are silicon P-Channel JFETs designed for switching applications.

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Note: The manufacturer provides a single datasheet file (2N5114-CentralSemiconductor.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

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Other Datasheets by Central Semiconductor

Part Number Description
2N5114 SILICON P-CHANNEL JFETS
2N5115 SILICON P-CHANNEL JFETS
2N5109 NPN RF TRANSISTOR
2N5172 COMPLEMENTARY SILICON TRANSISTORS
2N5189 NPN SILICON POWER TRANSISTOR

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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2N5114 2N5115 2N5116 SILICON P-CHANNEL JFETS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N5114, 2N5115, and 2N5116 are silicon P-Channel JFETs designed for switching applications. MARKING: FULL PART NUMBER TO-18 CASE MAXIMUM RATINGS: (TA=25°C) Gate-Drain Voltage Gate-Source Voltage Gate Current Power Dissipation Operating and Storage Junction Temperature SYMBOL VGD VGS IG PD TJ, Tstg 30 30 50 500 -65 to +200 UNITS V V mA mW °C ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted) 2N5114 2N5115 SYMBOL TEST CONDITIONS MIN MAX MIN MAX IGSS VGS=20V - 500 - 500 IGSS VGS=20V, TA=150°C - 1.0 - 1.0 IDSS VDS=18V 30 90 -- IDSS VDS=15V -- 15 60 ID(OFF) VDS=15V, VGS=12V - 500 -- ID(OFF) VDS=15V, VGS=7.