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2N5172 - COMPLEMENTARY SILICON TRANSISTORS

General Description

The CENTRAL SEMICONDUCTOR 2N5172 and 2N6076 are complementary silicon small signal transistors designed for general purpose applications.

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2N5172 NPN 2N6076 PNP COMPLEMENTARY SILICON TRANSISTORS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N5172 and 2N6076 are complementary silicon small signal transistors designed for general purpose applications. MARKING: FULL PART NUMBER TO-92 CASE MAXIMUM RATINGS: (TA=25°C) Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Power Dissipation Operating and Storage Junction Temperature SYMBOL VCBO VCEO VEBO IC PD TJ, Tstg 25 25 5.0 100 625 -65 to +150 ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted) SYMBOL TEST CONDITIONS MIN TYP ICBO VCB=25V ICBO VCB=25V, TA=100°C ICES VCE=25V IEBO VEB=5.0V (2N5172) IEBO VEB=3.0V (2N6076) BVCEO IC=10mA 25 VCE(SAT) IC=10mA, IB=1.