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2N5338 Datasheet PDF

Central Semiconductor 2N5338

The CENTRAL SEMICONDUCTOR 2N5336 series devices are silicon epitaxial planar NPN transistors designed for power amplifier and switching power supplies where very low saturation voltage and high speed switching at high current levels are needed.
Part No. 2N5338
Datasheet 2N5338 Download
Manufacturer
Central Semiconductor
Description NPN SILICON TRANSISTOR
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2N5338 datasheet page 1 preview

DESCRIPTION

: MARKING: FULL PART NUMBER TO-39 CASE

MAXIMUM RATINGS

: (TC=25°C) Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Continuous Base Current Power Dissipation Operating and Storage Junction Temperature Thermal Resistance SYMBOL VCBO VCEO VEBO IC IB PD TJ, Tstg ΘJC 2N5336 2N5338 2N5337 2N5339 80 100 80 100 6.0 5.0 1.0 6.0 -65 to +200 29

ELECTRICAL CHARACTERISTICS

: (TC=25°C unless otherwise noted) 2N5336 2N5337 SYMBOL TEST CONDITIONS MIN MAX ICBO VCB=Rated VCBO ICEV VCE=75V, VEB=1.5V ICEV VCE=90V, VEB=1.5V ICEV VCE=75V, VEB=1.5V, TC=150°C ICEV VCE=90V, VEB=1.5V, TC=150°C ICEO VCE=75V ICEO VCE=90V IEBO VEB=6.0V BVCEO IC=50mA VCE(SAT) IC=2.0A, IB=200mA VCE(SAT) IC=5.0A, IB=500mA VBE(SAT) IC=2.0A, IB=200mA VBE(SAT) IC=5.0A, IB=500mA hFE VCE=2.0V, IC=500mA (2N5336, 2N5338) hFE VCE=2.0V, IC=500mA (2N5337, 2N5339) hFE VCE=2.0V, IC=2.0A (2N5336, 2N5338) hFE VCE=2.0V, IC=2.0A (2N5337, 2N5339) hFE VCE=2.0V, IC=5.0A (2N5336, 2N5338) hFE VC...
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