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2N5962 - NPN SILICON TRANSISTOR

General Description

The CENTRAL SEMICONDUCTOR 2N5961 series devices are epoxy molded silicon NPN transistors, manufactured by the epitaxial planar process, designed for applications requiring extremely high gain (hFE) and low noise.

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2N5961 2N5962 2N5963 SILICON NPN TRANSISTORS TO-92 CASE w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N5961 series devices are epoxy molded silicon NPN transistors, manufactured by the epitaxial planar process, designed for applications requiring extremely high gain (hFE) and low noise. MARKING: FULL PART NUMBER MAXIMUM RATINGS: (TA=25°C unless otherwise noted) SYMBOL Collector-Base Voltage VCBO Collector-Emitter Voltage VCEO Emitter-Base Voltage VEBO Continuous Collector Current IC Power Dissipation PD Power Dissipation (TC=25°C) PD Operating and Storage Junction Temperature TJ, Tstg 2N5961 2N5962 2N5963 60 45 30 60 45 30 7.0 50 625 1.