2N5962
2N5962 is NPN SILICON TRANSISTOR manufactured by Central Semiconductor.
DESCRIPTION
: The CENTRAL SEMICONDUCTOR 2N5961 series devices are epoxy molded silicon NPN transistors, manufactured by the epitaxial planar process, designed for applications requiring extremely high gain (h FE) and low noise.
MARKING: FULL PART NUMBER
MAXIMUM RATINGS: (TA=25°C unless otherwise noted) SYMBOL
Collector-Base Voltage
VCBO
Collector-Emitter Voltage
VCEO
Emitter-Base Voltage
VEBO
Continuous Collector Current
Power Dissipation
Power Dissipation (TC=25°C)
Operating and Storage Junction Temperature
TJ, Tstg
2N5961 2N5962 2N5963
-65 to +150
ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted)
2N5961
SYMBOL TEST CONDITIONS
MIN MAX MIN MAX
ICBO
VCB=Rated VCBO
- 2.0
- 2.0
ICBO
VCB=Rated VCBO,...
