Datasheet Details
| Part number | 2N6036 |
|---|---|
| Manufacturer | Central Semiconductor |
| File Size | 147.60 KB |
| Description | COMPLEMENTARY SILICON DARLINGTON POWER TRANSISTORS |
| Datasheet | 2N6036 2N6034 Datasheet (PDF) |
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Overview: 2N6034 2N6035 2N6036 PNP 2N6037 2N6038 2N6039 NPN COMPLEMENTARY SILICON DARLINGTON POWER TRANSISTORS w w w. c e n t r a l s e m i .
This datasheet includes multiple variants, all published together in a single manufacturer document.
| Part number | 2N6036 |
|---|---|
| Manufacturer | Central Semiconductor |
| File Size | 147.60 KB |
| Description | COMPLEMENTARY SILICON DARLINGTON POWER TRANSISTORS |
| Datasheet | 2N6036 2N6034 Datasheet (PDF) |
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: The CENTRAL SEMICONDUCTOR 2N6034, 2N6037 series devices are complementary silicon Darlington power transistors, manufactured by the epitaxial base process, designed for general purpose amplifier and switching applications.
MARKING: FULL PART NUMBER TO-126 CASE MAXIMUM RATINGS: (TC=25°C unless otherwise noted) SYMBOL Collector-Base Voltage VCBO Collector-Emitter Voltage VCEO Emitter-Base Voltage VEBO Continuous Collector Current IC Peak Collector Current ICM Continuous Base Current IB Power Dissipation PD Power Dissipation (TA=25°C) PD Operating and Storage Junction Temperature TJ, Tstg Thermal Resistance ΘJA Thermal Resistance ΘJC 2N6034 2N6035 2N6036 2N6037 2N6038 2N6039 40 60 80 40 60 80 5.0 4.0 8.0 100 40 1.5 -65 to +150 83.3 3.12 UNITS V V V A A mA W W °C °C/W °C/W ELECTRICAL CHARACTERISTICS: (TC=25°C unless otherwise noted) SYMBOL TEST CONDITIONS MIN ICBO VCB=Rated VCBO ICEV VCE=Rated VCEO, VBE=1.5V ICEV VCE=Rated VCEO, VBE=1.5V, TC=125°C ICEO VCE=Rated VCEO IEBO VEB=5.0V BVCEO IC=100mA (2N6034, 2N6037) 40 BVCEO IC=100mA (2N6035, 2N6038) 60 BVCEO IC=100mA (2N6036, 2N6039) 80 VCE(SAT) IC=2.0A, IB=8.0mA VCE(SAT) IC=4.0A, IB=40mA VBE(SAT) IC=4.0A, IB=40mA VBE(ON) VCE=3.0V, IC=2.0A hFE VCE=3.0V, IC=500mA 500 hFE VCE=3.0V, IC=2.0A 750 hFE VCE=3.0V, IC=4.0A 100 fT VCE=10V, IC=750mA, f=1.0MHz 25 Cob VCB=10V, IE=0, f=100kHz (PNP) Cob VCB=10V, IE=0, f=100kHz (NPN) MAX 500 100 500 100 2.0 2.0 3.0 4.0 2.8 15K 200 100 UNITS μA μA μA μA mA V V V V V V V MHz pF pF R1 (12-March 2014) 2N6034 2N6035 2N6036 PNP 2N6037 2N6038 2N6039 NPN COMPLEMENTARY SILICON DARLINGTON POWER TRANSISTORS TO-126 CASE - MECHANICAL OUTLINE LEAD CODE: 1) Emitter 2) Collector 3) Base MARKING: FULL PART NUMBER w w w.
c e n t r a l s e m i .
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
2N6036 | Complementary power Darlington transistors | STMicroelectronics |
 |
2N6036 | Plastic Darlington Complementary Silicon Power Transistors | ON Semiconductor |
 |
2N6036 | PNP Transistor | INCHANGE |
 |
2N6036 | (2N6034 - 2N6036) Silicon Power Transistor | SavantIC |
|
2N6036G | Plastic Darlington Complementary Silicon Power Transistors | ON Semiconductor |
| Part Number | Description |
|---|---|
| 2N6031 | PNP SILICON POWER TRANSISTOR |
| 2N6034 | COMPLEMENTARY SILICON DARLINGTON POWER TRANSISTORS |
| 2N6035 | COMPLEMENTARY SILICON DARLINGTON POWER TRANSISTORS |
| 2N6037 | COMPLEMENTARY SILICON DARLINGTON POWER TRANSISTORS |
| 2N6038 | COMPLEMENTARY SILICON DARLINGTON POWER TRANSISTORS |
| 2N6039 | COMPLEMENTARY SILICON DARLINGTON POWER TRANSISTORS |
| 2N6027 | SILICON PROGRAMMABLE UNIJUNCTION TRANSISTORS |
| 2N6028 | SILICON PROGRAMMABLE UNIJUNCTION TRANSISTORS |
| 2N6040 | COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS |
| 2N6041 | COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS |