2SC1815-O
DESCRIPTION
: The CENTRAL SEMICONDUCTOR 2SC1815 Series are silicon NPN transistors, manufactured by the epitaxial planar process, designed for general purpose amplifier applications.
MARKING: FULL PART NUMBER
TO-92 CASE
MAXIMUM RATINGS: (TA=25°C unless otherwise noted) SYMBOL
Collector-Base Voltage
VCBO
Collector-Emitter Voltage
VCEO
Emitter-Base Voltage
VEBO
Continuous Collector Current
Power Dissipation
Operating and Storage Junction Temperature
TJ, Tstg
Thermal Resistance
JA
60 50 5.0 150 400 -55 to +125 250
ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted)
SYMBOL TEST CONDITIONS
ICBO
VCB=60V
ICEO
VCE=50V
IEBO
VEB=5.0V
BVCBO
IC=100μA
BVCEO
IC=100μA
BVEBO
IE=100μA
VCE(SAT) IC=100m A, IB=10m A
VBE(SAT) IC=100m A, IB=10m...
