Description
The CENTRAL SEMICONDUCTOR BC107, BC108, BC109 series types are small signal NPN silicon transistors, manufactured by the epitaxial planar process, designed for general purpose amplifier applications. MARKING: FULL PART NUMBER TO-18 CASE SYMBOL VCBO VCEO VEBO IC PD TJ, Tstg JC BC107 50 45 6.0 BC108 BC109 30 30 25 25 5.0 5.0 200 600 -65 to +200 175 SYMBOL TEST CONDITIONS MIN ICBO VCB=45V (BC107) ICBO VCB=45V, TA=125°C (BC107) ICBO VCB=25V (BC108, BC109) ICBO VCB=25V, TA=125°C (BC108, BC109) BVCEO IC=2.0mA (BC107) 45 BVCEO IC=2.0mA (BC108, BC109) 25 BVEBO IE=10μA (BC107) 6.0 BVEBO IE=10μA (BC108, BC109) 5.0 VCE(SAT) IC=10mA, IB=0.5mA VCE(SAT) IC=100mA, IB=5.0mA VBE(SAT) IC=10mA, IB=0.5mA VBE(SAT) IC=100mA, IB=5.0mA VBE(ON) VCE=5.0V, IC=2.0mA 0.55 VBE(ON) VCE=5.0V, IC=10mA hFE VCE=5.0V, IC=10μA (BC107B, BC108B, BC109B) 40 hFE VCE=5.0V, IC=10μA (BC108C, BC109C) 100 hFE VCE=5.0V, IC=2.0mA (BC107) 110 hFE VCE=5.0V, IC=2.0mA (BC107A) 110 hFE VCE=5.0V, IC=2.0mA (BC107B, BC108B, BC109B) 200 hFE VCE=5.0V, IC=2.0mA (BC108C, BC109C) 420 TYP MAX 15 4.0 15 4.0 0.25 0.6 0.7 0.83 1.0 1.05 0.7 0.77 450 220 450 800 UNITS V V V mA mW °C °C/W UNITS nA μA nA μA V V V V V V V V V V R1 (16-August 2012) BC107,A,B BC108B,C BC109B,C NPN SILICON TRANSISTOR - Continued: (TA=25°C unless otherwise noted) SYMBOL TEST CONDITIONS MIN TYP MAX UNITS hfe VCE=5.0V, IC=2.0mA, f=1.0kHz (BC107) 125 500 hfe VCE=5.0V, IC=2.0mA, f=1.0kHz (BC107A) 125 260 hfe VCE=5.0V, IC=2.0mA, f=1.0kHz (BC107B, BC108B, BC109B) 240 500 hfe VCE=5.0V, IC=2.0mA, f=1.0kHz (BC108C) 500 hfe VCE=5.0V, IC=2.0mA, f=1.0kHz (BC109C) 450 900 fT VCE=5.0V, IC=10mA, f=100MHz 150 MHz Cob VCB=10V, IE=0, f=1.0MHz 4.5 pF NF VCE=5.0V, IC=0.2mA, Rg=2.0kΩ, B=200Hz, f=1.0kHz (BC107, BC108) 10 dB NF VCE=5.0V, IC=0.2mA, Rg=2.0kΩ, B=200Hz, f=1.0kHz (BC109) 4.0 dB TO-18 CASE - MECHANICAL OUTLINE w w w.
