BD439 Overview
Key Specifications
Package: TO-225
Pins: 3
Max Operating Temp: 150 °C
Min Operating Temp: -55 °C
Description
The CENTRAL SEMICONDUCTOR BD439, BD440 series types are Complementary Silicon Power Transistors, manufactured by the epitaxial base process, designed for medium power, low speed switching applications. MARKING: FULL PART NUMBER TO-126 CASE Collector-Base Voltage Collector-Emitter Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Peak Collector Current (t≤10ms) Base Current Power Dissipation Operating and Storage Junction Temperature SYMBOL VCBO VCES VCEO VEBO IC ICM IB PD TJ, Tstg ΘJA ΘJC BD439 BD440 BD441 BD442 60 80 60 80 60 80 5.0 4.0 7.0 1.0 36 -65 to +150 100 3.5 ICBO VCB=Rated VCBO ICES IEBO VCE=Rated VCEO VEB=5.0V BVCEO BVCEO IC=100mA (BD439, BD440) IC=100mA (BD441, BD442) VCE(SAT) VBE(ON) IC=2.0A, IB=200mA VCE=1.0V, IC=2.0A hFE VCE=5.0V, IC=10mA (BD439, BD440) hFE VCE=5.0V, IC=10mA (BD441, BD442) hFE VCE=1.0V, IC=500mA hFE VCE=1.0V, IC=2.0A (BD439, BD440) hFE VCE=1.0V, IC=2.0A (BD441, BD442) fT VCE=1.0V, IC=250mA MIN 60 80 20 15 40 25 15 3.0 MAX 100 100 1.0 0.8 1.5 UNITS V V V V A A A W °C °C/W °C/W UNITS μA μA mA V V V V MHz R1 (2-February 2009) CentralTM Semiconductor Corp.
