Datasheet Details
| Part number | BSX46-10 |
|---|---|
| Manufacturer | Central Semiconductor |
| File Size | 321.76 KB |
| Description | SILICON NPN TRANSISTORS |
| Datasheet | BSX46-10 BSX45 Datasheet (PDF) |
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Overview: BSX45, -10, -16 BSX46, -10, -16 BSX47, -10 SILICON NPN TRANSISTORS w w w. c e n t r a l s e m i .
This datasheet includes multiple variants, all published together in a single manufacturer document.
| Part number | BSX46-10 |
|---|---|
| Manufacturer | Central Semiconductor |
| File Size | 321.76 KB |
| Description | SILICON NPN TRANSISTORS |
| Datasheet | BSX46-10 BSX45 Datasheet (PDF) |
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|
|
: The CENTRAL SEMICONDUCTOR BSX45 series devices are silicon NPN epitaxial transistors designed for general purpose amplifier and switching applications.
MARKING: FULL PART NUMBER TO-39 CASE MAXIMUM RATINGS: (TA=25°C) Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Peak Collector Current Peak Base Current Power Dissipation (TC=25°C) Power Dissipation Operating and Storage Junction Temperature Thermal Resistance Thermal Resistance SYMBOL VCBO VCEO VEBO IC ICM IBM PD PD TJ, Tstg ΘJC ΘJA BSX45 80 40 BSX46 100 60 7.0 1.0 1.5 200 6.25 0.8 -65 to +200 28 219 BSX47 120 80 ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted) BSX45 BSX46 SYMBOL TEST CONDITIONS MIN MAX MIN MAX ICBO VCB=60V - 30 - 30 ICBO VCB=60V, TA=150°C - 10 - 10 ICBO VCB=80V -- -- ICBO VCB=80V, TA=150°C -- -- IEBO VEB=5.0V - 10 - 10 VCE(SAT) IC=1.0A, IB=100mA - 1.0 - 1.0 VCE(SAT) IC=500mA, IB=25mA -- -- VBE(ON) VCE=1.0V, IC=100mA - 1.0 - 1.0 VBE(ON) VCE=1.0V, IC=500mA 0.75 1.5 0.75 1.5 VBE(ON) VCE=1.0V, IC=1.0A - 2.0 - 2.0 fT VCE=10V, IC=50mA, f=100MHz 50 - 50 - Cc VCB=10V, IE=0, f=1.0MHz - 25 - 20 ton IC=100mA, IB1=IB2=5.0mA - 200 - 200 toff IC=100mA, IB1=IB2=5.0mA - 850 - 850 NF VCE=5.0V, IC=100μA, RS=1.0kΩ f=1.0kHz, BW=200Hz 3.5 TYP 3.5 TYP BSX47 MIN MAX --- 30 - 10 - 10 -- 0.9 - 1.0 0.75 1.5 - 2.0 50 - 15 - 200 - 850 3.5 TYP UNITS V V V A A mA W W °C °C/W °C/W UNITS nA μA nA μA nA V V V V V MHz pF ns ns dB R2 (14-December 2018) BSX45, -10, -16 BSX46, -10, -16 BSX47, -10 SILICON NPN TRANSISTORS ELECTRICAL CHARACTERISTICS - Continued: (TA=25°C unless otherwise noted) BSX45-10 BSX46-10 BSX45-16 BSX47-10 BSX46-16 SYMBOL TEST CONDITIONS MIN TYP MAX MIN TYP MAX hFE VCE=1.0V, IC=100μA 15 - - 25 - - hFE VCE=1.0V, IC=100mA 63 - 160 100 - 250 hFE VCE=1.0V
| Part Number | Description |
|---|---|
| BSX46 | SILICON NPN TRANSISTORS |
| BSX45 | SILICON NPN TRANSISTORS |
| BSX45-10 | SILICON NPN TRANSISTORS |
| BSX45-16 | SILICON NPN TRANSISTORS |
| BSX47 | SILICON NPN TRANSISTORS |
| BSX47-10 | SILICON NPN TRANSISTORS |