DESCRIPTION
MAXIMUM RATINGS
(TC=25°C unless otherwise noted) Peak Repetitive Off-State Voltage RMS On-State Current (TC=60°C) Peak One Cycle Surge Peak Forward Gate Current Peak Reverse Gate Voltage Peak Gate Power Dissipation (tp=8.3ms) Average Gate Power Dissipation Storage Temperature Junction Temperature SYMBOL VDRM, VRRM IT(RMS) ITSM IGM VGM PGM PG(AV) Tstg TJ C103Y 30 C103YY C103A 60 100 0.8 8.0 0.5 8.0 1.0 0.01 -65 to +150 -65 to +125 C103B 200 UNITS V A A A V W W °C °C ELECTRICAL CHARACTERISTICS
(TC=25°C unless otherwise noted) SYMBOL IDRM, IRRM IDRM, IRRM IGT IGT IH IH VGT VGT VGT VTM dv/dt TEST CONDITIONS Rated VDRM, VRRM, RGK=1KΩ MIN TYP MAX 1.0 50 200 500 5.0 10 0.8 1.0 0.1 1.5 20 UNITS µA µA µA µA mA mA V V V V V/µs Rated VDRM, VRRM, TC=125°C, RGK=1KΩ VD=6.0V, RL=100Ω, RGK=1KΩ VD=6.0V, RL=100Ω, RGK=1KΩ, TC=-65°C RGK=1KΩ RGK=1KΩ, TC=-65°C VD=6.0V, RL=100Ω VD=6.0V, RL=100Ω, TC=-65°C VD=6.0V, RL=1KΩ, TC=125°C ITM=1.0A VD=VDRM, TC=125°C, RGK=1KΩ (SEE REVERSE SIDE) R0 C103 SERI...
Central Semiconductor
