CBR25F-010P Datasheet | Central Semiconductor

CBR25F-010P SERIES FAST RECOVERY SILICON BRIDGE RECTIFIERS 25 AMP, 100 THRU 600 VOLT w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CBR25F-010P series devices are silicon, single phase, full wave bridge rectifiers designed for fast recovery applications. The molded epoxy case has a built-in metal baseplate for heat sink mounting. The device utilizes standard 0.25” FASTON terminals. CASE FP MARKING: FULL PART NUMBER MAXIMUM RATINGS: (TA=25°C unless otherwise noted) SYMBOL -010P Peak Repetitive Reverse Voltage VRRM 100 DC Blocking Voltage VR 100 RMS Reverse Voltage VR(RMS) 70 Average Forward Current (TC=60°C) Peak Forward Surge Current IFSM RMS Isolation Voltage (case to lead) Viso Operating and Storage Junction Temperature TJ, Tstg Thermal Resistance ΘJC CBR25F -020P -040P 200 400 200 400 140 280 25 300 2500 -65 to +150 1.5 -060P 600 UNITS V V V A A Vac °C °C/W ELECTRICAL CHARACTERISTICS PER DIODE: (TA=25°C) SYMBOL TEST CONDITIONS IR VR=Rated VRRM VF IF=12.5A trr IF=0.5A, IR=1.0A, Irr=0.25A (100V, 200V, 400V) trr IF=0.5A, IR=1.0A, Irr=0.25A (600V) MAX 10 1.3 UNITS μA V ns...