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CJD210 - PNP POWER TRANSISTOR

This page provides the datasheet information for the CJD210, a member of the CJD200 PNP POWER TRANSISTOR family.

Datasheet Summary

Description

The CENTRAL SEMICONDUCTOR CJD200 and CJD210 are complementary silicon power transistors manufactured in a surface mount package designed for high current amplifier applications.

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Datasheet preview – CJD210

Datasheet Details

Part number CJD210
Manufacturer Central Semiconductor
File Size 521.39 KB
Description PNP POWER TRANSISTOR
Datasheet download datasheet CJD210 Datasheet
Additional preview pages of the CJD210 datasheet.

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Full PDF Text Transcription

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CJD200 NPN CJD210 PNP SURFACE MOUNT SILICON COMPLEMENTARY POWER TRANSISTORS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CJD200 and CJD210 are complementary silicon power transistors manufactured in a surface mount package designed for high current amplifier applications. MARKING: FULL PART NUMBER DPAK CASE MAXIMUM RATINGS: (TC=25°C unless otherwise noted) SYMBOL UNITS Collector-Base Voltage VCBO 40 V Collector-Emitter Voltage VCEO 25 V Emitter-Base Voltage VEBO 8.0 V Continuous Collector Current IC 5.0 A Peak Collector Current ICM 10 A Continuous Base Current IB 1.0 A Power Dissipation PD 12.5 W Power Dissipation (TA=25°C) PD 1.
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