CJD50 Datasheet PDF | Central Semiconductor

Central Semiconductor CJD50

The CENTRAL SEMICONDUCTOR CJD47 and CJD50 are silicon NPN power transistors manufactured in a surface mount package, and designed for high voltage applications such as power supplies and other switching applications.

Part No.	CJD50
Datasheet	CJD50 Download
Manufacturer	Central Semiconductor
Description	NPN SILICON POWER TRANSISTOR
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DESCRIPTION

: MARKING: FULL PART NUMBER DPAK CASE

MAXIMUM RATINGS

: (TC=25°C unless otherwise noted) SYMBOL Collector-Base Voltage VCBO Collector-Emitter Voltage VCEO Emitter-Base Voltage VEBO Continuous Collector Current IC Peak Collector Current ICM Continuous Base Current IB Power Dissipation PD Power Dissipation (TA=25°C) PD Operating and Storage Junction Temperature TJ, Tstg Thermal Resistance ΘJC Thermal Resistance ΘJA CJD47 350 CJD50 500 250 400 5.0 1.0 2.0 600 15 1.56 -65 to +150 8.33 80.1

ELECTRICAL CHARACTERISTICS

: (TC=25°C unless otherwise noted) SYMBOL TEST CONDITIONS MIN ICEO VCE=150V (CJD47) ICEO VCE=300V (CJD50) ICES VCE=350V (CJD47) ICES VCE=500V (CJD50) IEBO VEB=5.0V BVCEO IC=30mA (CJD47) 250 BVCEO IC=30mA (CJD50) 400 VCE(SAT) IC=1.0A, IB=200mA VBE(ON) VCE=10V, IC=1.0A hFE VCE=10V, IC=300mA 30 hFE VCE=10V, IC=1.0A 10 fT VCE=10V, IC=200mA, f=2.0MHz 10 hfe VCE=10V, IC=200mA, f=1.0kHz 25 MAX 200 200 100 100 1.0 1.0 1.5 150 UNITS V V V A A mA W W °C °C/W °C/W UNITS μA μA μA...