Datasheet Details
| Part number | CMKT2222A |
|---|---|
| Manufacturer | Central Semiconductor |
| File Size | 566.49 KB |
| Description | SURFACE MOUNT DUAL NPN SMALL SIGNAL SILICON SWITCHING TRANSISTORS |
| Datasheet | CMKT2222A-CentralSemiconductor.pdf |
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Overview: CMKT2222A SURFACE MOUNT DUAL NPN SMALL SIGNAL SILICON SWITCHING TRANSISTORS SOT-363 CASE w w w. c e n t r a l s e m i .
| Part number | CMKT2222A |
|---|---|
| Manufacturer | Central Semiconductor |
| File Size | 566.49 KB |
| Description | SURFACE MOUNT DUAL NPN SMALL SIGNAL SILICON SWITCHING TRANSISTORS |
| Datasheet | CMKT2222A-CentralSemiconductor.pdf |
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: The CENTRAL SEMICONDUCTOR CMKT2222A consists of two individually isolated 2222A NPN silicon transistors, manufactured by the epitaxial planar process and epoxy molded in an SOT-363 surface mount package.
This ULTRAmini™ device has been designed for small signal general purpose and switching applications.
MARKING CODE: K22 MAXIMUM RATINGS: (TA=25°C) Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Power Dissipation Operating and Storage Junction Temperature Thermal Resistance SYMBOL VCBO VCEO VEBO IC PD TJ, Tstg ΘJA 75 40 6.0 600 350 -65 to +150 357 ELECTRICAL CHARACTERISTICS PER TRANSISTOR: (TA=25°C unless otherwise noted) SYMBOL TEST CONDITIONS MIN MAX ICBO VCB=60V 10 ICBO VCB=60V, TA=125°C 10 ICEV VCE=60V, VEB=3.0V 10 IEBO VEB=3.0V 10 BVCBO IC=10μA 75 BVCEO IC=10mA 40 BVEBO IE=10μA 6.0 VCE(SAT) IC=150mA, IB=15mA 0.3 VCE(SAT) IC=500mA, IB=50mA 1.0 VBE(SAT) IC=150mA, IB=15mA 0.6 1.2 VBE(SAT) IC=500mA, IB=50mA 2.0 hFE VCE=10V, IC=0.1mA 35 hFE VCE=10V, IC=1.0mA 50 hFE VCE=10V, IC=10mA 75 hFE VCE=1.0V, IC=150mA 50 hFE VCE=10V, IC=150mA 100 300 hFE VCE=10V, IC=500mA 40 fT VCE=20V, IC=20mA, f=100MHz 300 Cob VCB=10V, IE=0, f=1.0MHz 8.0 Cib VEB=0.5V, IC=0, f=1.0MHz 25 UNITS V V V mA mW °C °C/W UNITS nA μA nA nA V V V V V V V MHz pF pF R4 (13-January 2010) CMKT2222A SURFACE MOUNT DUAL NPN SMALL SIGNAL SILICON SWITCHING TRANSISTORS ELECTRICAL CHARACTERISTICS PER TRANSISTOR - Continued: (TA=25°C) SYMBOL TEST CONDITIONS MIN MAX hie VCE=10V, IC=1.0mA, f=1.0kHz 2.0 8.0 hie VCE=10V, IC=10mA, f=1.0kHz 0.25 1.25 hre VCE=10V, IC=1.0mA, f=1.0kHz 8.0 hre VCE=10V, IC=10mA, f=1.0kHz 4.0 hfe VCE=10V, IC=1.0mA, f=1.0kHz 50 300 hfe VCE=10V, IC=10mA, f=1.0kHz 75 375 hoe VCE=10V, IC=1.0mA, f=1.0kHz 5.0
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