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CMLD6001 - ULTRA LOW LEAKAGE SWITCHING DIODE

General Description

The CENTRAL SEMICONDUCTOR CMLD6001 type contains two (2) isolated silicon switching diodes, manufactured by the epitaxial planar process, epoxy molded in an SOT-563 surface mount package.

These devices are designed for switching applications requiring extremely low leakage.

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The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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CMLD6001 SURFACE MOUNT SILICON DUAL, ISOLATED ULTRA LOW LEAKAGE SWITCHING DIODE SOT-563 CASE w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CMLD6001 type contains two (2) isolated silicon switching diodes, manufactured by the epitaxial planar process, epoxy molded in an SOT-563 surface mount package. These devices are designed for switching applications requiring extremely low leakage. MARKING CODE: C6D or 6D MAXIMUM RATINGS: (TA=25°C) Continuous Reverse Voltage Peak Repetitive Reverse Voltage Continuous Forward Current Peak Forward Surge Current, tp=1.0μs Peak Forward Surge Current, tp=1.0s Power Dissipation Operating and Storage Junction Temperature Thermal Resistance SYMBOL VR VRRM IF IFSM IFSM PD TJ, Tstg ΘJA 75 100 250 4.0 1.