CMLDM3757 Datasheet | Central Semiconductor

DESCRIPTION : The CENTRAL SEMICONDUCTOR CMLDM3757 consists of plementary silicon N-Channel and P-Channel enhancement-mode MOSFETs designed for high speed pulsed amplifier and driver applications. These MOSFETs offer very low r DS(ON) and low threshold voltage. MARKING CODE: 3C7 SOT-563 CASE APPLICATIONS: - Load/Power switches - Power supply converter circuits - Battery powered portable devices FEATURES : - ESD protection up to 1800V (Human Body Model) - 350m W power dissipation - Very low r DS(ON) - Low threshold voltage - Logic level patible - Small, SOT-563 surface mount package MAXIMUM RATINGS: (TA=25°C) Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (Steady State) Maximum Pulsed Drain Current (tp=10μs) Power Dissipation (Note 1) Power Dissipation (Note 2) Power Dissipation (Note 3) Operating and Storage Junction Temperature Thermal Resistance (Note 1) SYMBOL N-CH (Q1) P-CH (Q2) TJ, Tstg -65 to +150 ΘJA UNITS V V m A m A m W m W m W °C °C/W ELECTRICAL CHARACTERISTICS: (TA=25°C) N-CH (Q1) SYMBOL TEST CONDITIONS MIN TYP MAX IGSSF, IGSSR VGS=4.5V, VDS=0 - - 5.0 IDSS VDS=16V, VGS=0 - - 1.0 BVDSS VGS=0, ID=250μA -...