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CMLDM3757 - Dual-Channel MOSFET

General Description

The CENTRAL SEMICONDUCTOR CMLDM3757 consists of complementary silicon N-Channel and P-Channel enhancement-mode MOSFETs designed for high speed pulsed amplifier and driver applications.

These MOSFETs offer very low rDS(ON) and low threshold voltage.

Key Features

  • ESD protection up to 1800V (Human Body Model).
  • 350mW power dissipation.
  • Very low rDS(ON).
  • Low threshold voltage.
  • Logic level compatible.
  • Small, SOT-563 surface mount package.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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CMLDM3757 SURFACE MOUNT SILICON N-CHANNEL AND P-CHANNEL ENHANCEMENT-MODE COMPLEMENTARY MOSFET w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CMLDM3757 consists of complementary silicon N-Channel and P-Channel enhancement-mode MOSFETs designed for high speed pulsed amplifier and driver applications. These MOSFETs offer very low rDS(ON) and low threshold voltage.