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CMLM0305G - Multi Discrete Module

Download the CMLM0305G datasheet PDF. This datasheet also covers the CMLM0305 variant, as both devices belong to the same multi discrete module family and are provided as variant models within a single manufacturer datasheet.

General Description

The CENTRAL SEMICONDUCTOR CMLM0305 and CMLM0305G are Multi Discrete Modules™ consisting of a single N-Channel enhancement-mode MOSFET and a low VF Schottky diode packaged in a space saving SOT-563 surface mount case.

Key Features

  • ESD protection up to 2kV.
  • Low rDS(on) Transistor (3Ω MAX @ VGS=1.8V).
  • Low VF Schottky Diode (0.47V MAX @ 0.5A).

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (CMLM0305-CentralSemiconductor.pdf) that lists specifications for multiple related part numbers.

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Other Datasheets by Central Semiconductor

Part Number Description
CMLM0305 Multi Discrete Module
CMLM0205 Multi Discrete Module
CMLM2205 SILICON NPN SWITCHING TRANSISTOR AND SCHOTTKY DIODE
CMLM3405 NPN TRANSISTOR AND SCHOTTKY DIODE
CMLD2004 SURFACE MOUNT SILICON DUAL / HIGH VOLTAGE SWITCHING DIODES

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
CMLM0305 CMLM0305G* Multi Discrete Module™ SURFACE MOUNT SILICON N-CHANNEL MOSFET AND LOW VF SCHOTTKY DIODE SOT-563 CASE w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CMLM0305 and CMLM0305G are Multi Discrete Modules™ consisting of a single N-Channel enhancement-mode MOSFET and a low VF Schottky diode packaged in a space saving SOT-563 surface mount case. This device is designed for small signal general purpose applications where size and operational efficiency are prime requirements. MARKING CODES: CMLM0305: 5C3 CMLM0305G*: 5CG * Device is Halogen Free by design APPLICATIONS: • DC / DC Converters • Battery Powered Portable Equipment FEATURES: • ESD protection up to 2kV • Low rDS(on) Transistor (3Ω MAX @ VGS=1.8V) • Low VF Schottky Diode (0.47V MAX @ 0.