CMPT5551 Datasheet | Central Semiconductor

DESCRIPTION : The CENTRAL SEMICONDUCTOR CMPT5551 type is an NPN silicon transistor manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for high voltage amplifier applications. MARKING CODE: 1FF SOT-23 CASE MAXIMUM RATINGS: (TA=25°C) Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Power Dissipation Operating and Storage Junction Temperature Thermal Resistance SYMBOL UNITS VCBO VCEO VEBO IC PD TJ, Tstg ΘJA 180 160 6.0 600 350 -65 to +150 357 V V V m A m W °C °C/W ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted) SYMBOL TEST CONDITIONS UNITS ICBO ICBO BVCBO BVCEO BVEBO VCE(SAT) VCE(SAT) VBE(SAT) VBE(SAT) h FE h FE h FE f T Cob hfe NF VCB=120V 50 n A VCB=120V, TA=100°C 50 µA IC=100µA 180 V IC=1.0m A 160 V IE=10µA 6.0 V IC=10m A, IB=1.0m A 0.15 IC=50m A, IB=5.0m A 0.20 IC=10m A, IB=1.0m A 1.00 IC=50m A, IB=5.0m A 1.00 VCE=5.0V, IC=1.0m A VCE=5.0V, IC=10m A VCE=5.0V, IC=50m...