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CMRDM3590 - SURFACE MOUNT SILICON DUAL N-CHANNEL ENHANCEMENT-MODE MOSFET

Datasheet Summary

Description

The CENTRAL SEMICONDUCTOR CMRDM3590 is an enhancement-mode dual N-Channel MOSFET, manufactured by the N-Channel DMOS process, designed for high speed pulsed amplifier and driver applications.

This MOSFET offers low rDS(ON) and low threshold voltage.

Device i

Features

  • Power dissipation: 125mW.
  • Low package profile: 0.5mm (MAX).
  • Low rDS(ON).
  • Low threshold voltage.
  • Logic level compatible.
  • Small SOT-963 surface mount package.

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Datasheet Details

Part number CMRDM3590
Manufacturer Central Semiconductor
File Size 701.11 KB
Description SURFACE MOUNT SILICON DUAL N-CHANNEL ENHANCEMENT-MODE MOSFET
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CMRDM3590 SURFACE MOUNT SILICON DUAL N-CHANNEL ENHANCEMENT-MODE MOSFET w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CMRDM3590 is an enhancement-mode dual N-Channel MOSFET, manufactured by the N-Channel DMOS process, designed for high speed pulsed amplifier and driver applications. This MOSFET offers low rDS(ON) and low threshold voltage. MARKING CODE: CR SOT-963 CASE • Device is Halogen Free by design APPLICATIONS: • Load/Power switches • Power supply converter circuits • Battery powered portable devices FEATURES: • Power dissipation: 125mW • Low package profile: 0.
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