Datasheet Details
| Part number | CMSD2005S |
|---|---|
| Manufacturer | Central Semiconductor |
| File Size | 536.52 KB |
| Description | HIGH VOLTAGE SILICON SWITCHING DIODES |
| Datasheet | CMSD2005S-CentralSemiconductor.pdf |
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Overview: CMSD2005S SURFACE MOUNT DUAL, IN SERIES HIGH VOLTAGE SILICON SWITCHING DIODES SOT-323 CASE w w w. c e n t r a l s e m i .
| Part number | CMSD2005S |
|---|---|
| Manufacturer | Central Semiconductor |
| File Size | 536.52 KB |
| Description | HIGH VOLTAGE SILICON SWITCHING DIODES |
| Datasheet | CMSD2005S-CentralSemiconductor.pdf |
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: The CENTRAL SEMICONDUCTOR CMSD2005S contains two (2) High Voltage Silicon Switching Diodes, manufactured by the epitaxial planar process, epoxy molded in a SOT-323 surface mount package, designed for applications requiring high voltage capability.
MARKING CODE: B5D MAXIMUM RATINGS: (TA=25 °C) Continuous Reverse Voltage Peak Repetitive Reverse Voltage Peak Repetitive Reverse Current Continuous Forward Current Peak Repetitive Forward Current Peak Forward Surge Current, tp=1.0μs Peak Forward Surge Current, tp=1.0s Power Dissipation Operating and Storage Junction Temperature Thermal Resistance SYMBOL VR VRRM IRRM IF IFRM IFSM IFSM PD TJ, Tstg ΘJA 300 350 200 225 625 4.0 1.0 275 -65 to +150 455 ELECTRICAL CHARACTERISTICS PER DIODE: (TA=25°C unless otherwise noted) SYMBOL TEST CONDITIONS MIN MAX IR IR BVR VF VF VF CT trr VR=280V VR=280V, T
| Part Number | Description |
|---|---|
| CMSD2836 | DUAL SILICON SWITCHING DIODES |
| CMSD2838 | DUAL SILICON SWITCHING DIODES |
| CMSD4448 | HIGH SPEED SILICON SWITCHING DIODE |
| CMSD6001 | ULTRA LOW LEAKAGE SILICON SWITCHING DIODES |
| CMSD6001A | ULTRA LOW LEAKAGE SILICON SINGLE SWITCHING DIODES |
| CMSD6001C | ULTRA LOW LEAKAGE SILICON DUAL SWITCHING DIODES |
| CMSD6001S | ULTRA LOW LEAKAGE SILICON DUAL SWITCHING DIODES |
| CMSD6263 | SILICON SINGLE SCHOTTKY DIODES |
| CMSD6263A | SILICON DUAL SCHOTTKY DIODES |
| CMSD6263C | SILICON DUAL SCHOTTKY DIODES |