CMSD2005S Overview
The CENTRAL SEMICONDUCTOR CMSD2005S contains two (2) High Voltage Silicon Switching Diodes, manufactured by the epitaxial planar process, epoxy molded in a SOT-323 surface mount package, designed for applications requiring high voltage capability. (TA=25°C unless otherwise noted) SYMBOL TEST CONDITIONS MIN MAX IR IR BVR VF VF VF CT trr VR=280V VR=280V,.