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CMSD2005S - HIGH VOLTAGE SILICON SWITCHING DIODES

General Description

The CENTRAL SEMICONDUCTOR CMSD2005S contains two (2) High Voltage Silicon Switching Diodes, manufactured by the epitaxial planar process, epoxy molded in a SOT-323 surface mount package, designed for applications requiring high voltage capability.

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Full PDF Text Transcription (Reference)

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CMSD2005S SURFACE MOUNT DUAL, IN SERIES HIGH VOLTAGE SILICON SWITCHING DIODES SOT-323 CASE w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CMSD2005S contains two (2) High Voltage Silicon Switching Diodes, manufactured by the epitaxial planar process, epoxy molded in a SOT-323 surface mount package, designed for applications requiring high voltage capability. MARKING CODE: B5D MAXIMUM RATINGS: (TA=25 °C) Continuous Reverse Voltage Peak Repetitive Reverse Voltage Peak Repetitive Reverse Current Continuous Forward Current Peak Repetitive Forward Current Peak Forward Surge Current, tp=1.0μs Peak Forward Surge Current, tp=1.