CMST5087 Datasheet | Central Semiconductor

DESCRIPTION : The CENTRAL SEMICONDUCTOR CMST5086, CMST5087 types are PNP silicon transistors manufactured by the epitaxial planar process, epoxy molded in a SUPERmini™ surface mount package, designed for applications requiring high gain and low noise. SOT-323 CASE MARKING CODES: CMST5086: 2PC CMST5087: 2QC MAXIMUM RATINGS: (TA=25°C) Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Power Dissipation Operating and Storage Junction Temperature Thermal Resistance SYMBOLUNITS VCBO VCEO VEBO IC PD TJ, Tstg ΘJA 50 50 3.0 50 275 -65 to +150 455 V V V m A m W °C °C/W ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted) CMST5086 SYMBOL TEST CONDITIONS MIN MAX ICBO ICBO BVCBO BVCEO BVEBO VCE(SAT) VBE(SAT) h FE h FE h FE f T Cob hfe NF VCB=10V VCB=35V IC=100µA IC=1.0m A IE=100µA IC=10m A, IB=1.0m A IC=10m A, IB=1.0m A VCE=5.0V, IC=0.1m A VCE=5.0V, IC=1.0m A VCE=5.0V, IC=10m A VCE=5.0V, IC=500µA, f=20MHz VCB=5.0V, IE=0, f=1.0MHz VCE=5.0V, IC=1.0m A, f=1.0k Hz VCE=5.0V, IC=20m A, RS=10kΩ f=10Hz to 15.7k Hz - 10 - 50 - 50 - 3.0 - - 0.30 - 0.85 150 500 - 150 - 40 - - 4.0 150 600 - 3.0 VCE=5.0V, IC=100µA, RS=3.0kΩ f=1.0k Hz - 3.0 CMST5087 MIN MAX - 10 - 50 50 50 3.0 - 0.30 - 0.85 250 800 250 250...