CMUDM8001 - SURFACE MOUNT N-CHANNEL ENHANCEMENT-MODE SILICON MOSFET

Product Overview

Central Semiconductor

Datasheet Details

Part number	CMUDM8001
Manufacturer	Central Semiconductor
File Size	364.29 KB
Description	SURFACE MOUNT N-CHANNEL ENHANCEMENT-MODE SILICON MOSFET
Datasheet	CMUDM8001 Datasheet
Additional preview pages of the CMUDM8001 datasheet.

Product details

Description

The CENTRAL SEMICONDUCTOR CMUDM8001 is an Enhancement-mode P-Channel Field Effect Transistor, manufactured by the P-Channel DMOS Process, designed for high speed pulsed amplifier and driver applications. Load/Power Switches Power Supply Converter Circuits Battery Powered Portable Equipment MAXIMUM RATINGS: (TA=25°C) Drain-Source Voltage Gate-Source Voltage Continu

Features

Power Dissipation 250mW Low rDS(on) Low Threshold Voltage Logic Level Compatible Small, SOT-523 Surface Mount Package Complementary Device: CMUDM7001 UNITS V V mA mA mW °C SYMBOL VDS VGS ID ID PD TJ, Tstg 20 10 100 200 250 -65 to +150.

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Published: Apr 1, 2011 |