Datasheet Details
| Part number | CMYD4448 |
|---|---|
| Manufacturer | Central Semiconductor |
| File Size | 639.05 KB |
| Description | SWITCHING DIODE |
| Download | CMYD4448 Download (PDF) |
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Overview: CMYD4448 SURFACE MOUNT SILICON DUAL, ISOLATED HIGH SPEED SWITCHING DIODE SOT-543 CASE w w w. c e n t r a l s e m i .
| Part number | CMYD4448 |
|---|---|
| Manufacturer | Central Semiconductor |
| File Size | 639.05 KB |
| Description | SWITCHING DIODE |
| Download | CMYD4448 Download (PDF) |
|
|
|
: The CENTRAL SEMICONDUCTOR CMYD4448 contains two (2) isolated configuration silicon switching diodes, manufactured by the epitaxial planar process, epoxy molded in an SOT-543 surface mount package.
This device is designed for high speed switching applications.
MARKING CODE: C48 MAXIMUM RATINGS: (TA=25°C) Peak Repetitive Reverse Voltage Continuous Forward Current Peak Repetitive Forward Current Peak Forward Surge Current, tp=1.0μs Peak Forward Surge Current, tp=1.0s Power Dissipation Operating and Storage Junction Temperature Thermal Resistance SYMBOL VRRM IF IFRM IFSM IFSM PD TJ, Tstg ΘJA 120 250 500 4.0 1.0 250 -65 to +150 500 ELECTRICAL CHARACTERISTICS PER DIODE: (TA=25°C unless otherwise noted) SYMBOL TEST CONDITIONS MIN TYP MAX IR VR=50V 300 IR VR=50V, TA=125°C 100 IR VR=100V 500 BVR IR=100μA 120 150 VF IF=1.0mA 0.55 0.59 0.65 VF IF=10mA 0.67 0.72 0.77 VF IF=100mA 0.85 0.91 1.0 CJ VR=0, f=1.0MHz 1.5 trr IR=IF=10mA, Irr=1.0mA, RL=100Ω 2.0 4.0 UNITS V mA mA A A mW °C °C/W UNITS nA μA nA V V V V pF ns R2 (19-June 2019) CMYD4448 SURFACE MOUNT SILICON DUAL, ISOLATED HIGH SPEED SWITCHING DIODE SOT-543 CASE - MECHANICAL OUTLINE PIN CONFIGURATION LEAD CODE: 1) Anode D1 2) Anode D2 3) Cathode D2 4) Cathode D1 MARKING CODE: C48 w w w.
| Part Number | Description |
|---|---|
| CMYTVS5-2 | TVS/DIODE |