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www.DataShePet4RU.OcomCESS CP208
Power Transistor
NPN - Amp/Switch Transistor Chip
CentralTM
Semiconductor Corp.
PROCESS DETAILS Process Die Size Die Thickness Base Bonding Pad Area Emitter Bonding Pad Area Top Side Metalization Back Side Metalization
GEOMETRY
EPITAXIAL BASE 66 X 66 MILS 12.5 ± 1.0 MILS 12 X 24 MILS 11 X 14 MILS Al - 50,000Å Cr/Ni/Ag - 16,000Å
GROSS DIE PER 4 INCH WAFER 2,630
PRINCIPAL DEVICE TYPES CJD31C MJE182 TIP31C
BACKSIDE COLLECTOR
145 Adams Avenue Hauppauge, NY 11788 USA Tel: (631) 435-1110 Fax: (631) 435-1824 www.centralsemi.com
R2 (1-August 2002)
CentralTM
www.DataSheet4U.com Semiconductor Corp.
PROCESS CP208
Typical Electrical Characteristics
145 Adams Avenue Hauppauge, NY 11788 USA Tel: (631) 435-1110 Fax: (631) 435-1824 www.centralsemi.