CP211 Overview
PROCESS Power Transistor CP211 Central TM NPN - Amp/Switch Transistor Chip Semiconductor Corp. PROCESS DETAILS Process Die Size Die Thickness Base Bonding Pad Area Emitter Bonding Pad Area Top Side Metalization Back Side Metalization GEOMETRY GROSS DIE PER 4 INCH WAFER 1,450 PRINCIPAL DEVICE TYPES 2N3054A . (631) 435-1824 .centralsemi.