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PROCESS CP289
Power Transistors
8.0 Amp NPN - High Voltage Transistor Chip
PROCESS DETAILS Die Size Die Thickness Base Bonding Pad Area Emitter Bonding Pad Area Top Side Metalization Back Side Metalization
GEOMETRY
167 x 167 MILS 9.5 MILS 59 x 29 MILS 64 x 28 MILS Al - 45,000Å Ti/Ni/Ag - 3,000Å, 10,000Å, 10,000Å
GROSS DIE PER 5 INCH WAFER 558
PRINCIPAL DEVICE TYPES MJE13009
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