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PROCESS
CPS057
Silicon Controlled Rectifier
Sensitive Gate SCR Chip
PROCESS DETAILS Process Die Size Die Thickness Cathode Bonding Pad Area Gate Bonding Pad Area Top Side Metalization Back Side Metalization
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GLASS PASSIVATED MESA 57 x 57 MILS 8.7 MILS ± 0.6 MILS 24 x 14 MILS 7.9 x 7.9 MILS Al - 45,000Å Al/Mo/Ni/Ag - 32,000Å
GEOMETRY GROSS DIE PER 4 INCH WAFER 3,374 PRINCIPAL DEVICE TYPES CS39-4D 2N2323 thru 2N2329 CS223-4M
BACKSIDE ANODE 145 Adams Avenue Hauppauge, NY 11788 USA Tel: (631) 435-1110 Fax: (631) 435-1824 www.centralsemi.com
R1 (19 -May 2005)
PROCESS
CPS057
Typical Electrical Characteristics
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145 Adams Avenue Hauppauge, NY 11788 USA Tel: (631) 435-1110 Fax: (631) 435-1824 www.centralsemi.