Datasheet4U Logo Datasheet4U.com

CRSH1-3 - SCHOTTKY BARRIER RECTIFIER

This page provides the datasheet information for the CRSH1-3, a member of the CRSH1-2 SCHOTTKY BARRIER RECTIFIER family.

Datasheet Summary

Description

The CENTRAL SEMICONDUCTOR CRSH1 Series types are Schottky Barrier Rectifiers mounted in an axial lead epoxy case using metal to silicon junction to yield low forward voltage drop and instantaneous reverse recovery times.

📥 Download Datasheet

Datasheet preview – CRSH1-3

Datasheet Details

Part number CRSH1-3
Manufacturer Central Semiconductor
File Size 121.16 KB
Description SCHOTTKY BARRIER RECTIFIER
Datasheet download datasheet CRSH1-3 Datasheet
Additional preview pages of the CRSH1-3 datasheet.

📁 Similar Datasheet

  • CRS01 - Schottky Barrier Rectifier (Toshiba Semiconductor)
  • CRS02 - Schottky Barrier Type Schottky Barrier Rectifier (Toshiba Semiconductor)
  • CRS03 - Schottky Barrier Rectifier (Toshiba Semiconductor)
  • CRS04 - SCHOTTKY BARRIER RECTIFIERS (Toshiba Semiconductor)
  • CRS05 - Schottky Barrier Rectifier (Toshiba)
  • CRS06 - Schottky Barrier Rectifier (Toshiba Semiconductor)
  • CRS0603A - High Power Anti-Surge Resistor (BOURNS)
  • CRS08 - Schottky Barrier Rectifier (Toshiba Semiconductor)
  • CRS08 - SCHOTTKY BARRIER RECTIFIER (AiT Semiconductor)
  • CRS0805 - High Power Anti-Surge Chip Resistor (BOURNS)
Other Datasheets by Central Semiconductor

Full PDF Text Transcription

Click to expand full text
DATA SHEET CRSH1 SERIES SCHOTTKY BARRIER RECTIFIER 1.0 AMPS, 20 THRU 100 VOLTS JEDEC DO-41 CASE DESCRIPTION The CENTRAL SEMICONDUCTOR CRSH1 Series types are Schottky Barrier Rectifiers mounted in an axial lead epoxy case using metal to silicon junction to yield low forward voltage drop and instantaneous reverse recovery times. MAXIMUM RATINGS (TA=25°C unless otherwise noted) SYMBOL CRSH1 CRSH1 CRSH1 CRSH1 CRSH1 CRSH1 CRSH1 -2 -3 -4 -5 -6 -8 -10 UNITS Peak Repetitive Reverse Voltage DC Blocking Voltage RMS Reverse Voltage Average Forward Current (TL=75°C) Peak Forward Surge Current (8.3ms) Junction Temperature StorageTemperature Thermal Resistance VRRM VR VR(RMS) IO IFSM TJ Tstg ΘJA 20 30 40 50 60 80 100 V 20 30 40 50 60 80 100 V 14 21 28 35 42 56 70 V 1.
Published: |