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CS223-4N Datasheet Silicon Controlled Rectifiers

Manufacturer: Central Semiconductor

Overview: CS223-4M CS223-4N SURFACE MOUNT SILICON CONTROLLED RECTIFIERS 4.0 AMP, 600 AND 800 VOLT w w w. c e n t r a l s e m i .

This datasheet includes multiple variants, all published together in a single manufacturer document.

General Description

: The CENTRAL SEMICONDUCTOR CS223-4M and CS223-4N are epoxy molded SCRs designed for sensing circuit applications and control systems.

SOT-223 CASE MARKING: FULL PART NUMBER MAXIMUM RATINGS: (TC=25°C unless otherwise noted) Peak Repetitive Off-State Voltage RMS On-State Current (TC=85°C) Peak One Cycle Surge, t=10ms I2t Value for Fusing, t=10ms Peak Gate Power, tp=20µs Average Gate Power Dissipation Peak Gate Current, tp=20µs Critical Rate of Rise of On-State Current Operating Junction Temperature Storage Temperature Thermal Resistance SYMBOL CS223-4M CS223-4N VDRM, VRRM 600 800 IT(RMS) 4.0 ITSM 30 I2t 4.5 UNITS V A A A2s PGM 3.0 PG (AV) 0.2 IGM 1.2 di/dt 50 W W A A/µs TJ -50 to +125 Tstg -50 to +150 ΘJA 120 °C °C °C/W ELECTRICAL CHARACTERISTICS: (TC=25°C unless otherwise noted) SYMBOL TEST CONDITIONS MIN TYP MAX UNITS IDRM, IRRM Rated VDRM, VRRM, RGK=1.0KΩ 10 µA IDRM, IRRM Rated VDRM, VRRM, RGK=1.0KΩ, TC=125°C 100 µA IGT VD=12V, RL=10Ω 38 200 µA IH IT=50mA, RGK=1.0KΩ 1.0 2.0 mA VGT VD=12V, RL=10Ω 0.55 0.8 V VTM ITM=8.0A, tp=380µs 2.0 2.2 V dv/dt VD=2/3 VDRM, RGK=1.0KΩ, TC=125°C 10 V/µs R7 (09-January 2023) CS223-4M CS223-4N SURFACE MOUNT SILICON CONTROLLED RECTIFIERS 4.0 AMP, 600 AND 800 VOLT SOT-223 CASE - MECHANICAL OUTLINE LEAD CODE: 1) Cathode 2) Anode 3) Gate 4) Anode MARKING: FULL PART NUMBER SYMBOL A B C D E F G H I J K L M DIMENSIONS INCHES MILLIMETERS MIN MAX MIN MAX 0° 10° 0° 10° 0.059 0.071 1.50 1.80 0.018 --- 0.45 --- 0.000 0.004 0.00 0.10 10° 10° 0.009 0.014 0.23 0.35 0.248 0.270 6.30 6.85 0.114 0.122 2.90 3.10 0.130 0.146 3.30 3.70 0.264 0.287 6.70 7.30 0.024 0.033 0.60 0.85 0.091 2.30 0.181 4.60 SOT-223 (REV: R5) w w w.

c e n t r a l s e m i .

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