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CSLLDM22011-225F - N-CHANNEL MOSFET

General Description

The CENTRAL SEMICONDUCTOR CSLLDM22011-225F is an N-Channel MOSFET designed for high voltage, fast switching, low earth orbit applications This radiation hardened MOSFET combines high voltage capability with ultra low rDS(ON), low threshold voltage, and low gate charge for optimal efficiency.

Key Features

  • High voltage capability.
  • Low gate charge (Qgs = 4.45nC TYP).
  • Ultra low rDS(ON) (0.3Ω TYP).
  • TID = 10kRad.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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spacelliteTM CSLLDM22011-225F N-CHANNEL LR POWER SPACELLITETM MOSFET 11 AMP, 225 VOLT w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CSLLDM22011-225F is an N-Channel MOSFET designed for high voltage, fast switching, low earth orbit applications This radiation hardened MOSFET combines high voltage capability with ultra low rDS(ON), low threshold voltage, and low gate charge for optimal efficiency. TO-220FP CASE MARKING CODE: CSLL11225 TO-220FP D/C RADIATION TESTING AEROSPACE INDUSTRIES APPLICATIONS: • Satellite power supplies • Solar panel inverters TEST FLOW: • Based on PEM-INST-001 FEATURES: • High voltage capability • Low gate charge (Qgs = 4.45nC TYP) • Ultra low rDS(ON) (0.