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CYT5551HCD - ISOLATED NPN HIGH CURRENT SILICON TRANSISTORS

Description

The CENTRAL SEMICONDUCTOR CYT5551HCD type consists of two (2) isolated NPN high current silicon transistors packaged in an epoxy molded SOT-228 surface mount case.

Manufactured by the epitaxial planar process, this SUPERmini™ device is ideal for high current applications.

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CYT5551HCD SURFACE MOUNT DUAL, ISOLATED NPN HIGH CURRENT SILICON TRANSISTORS Central TM Semiconductor Corp. DESCRIPTION: The CENTRAL SEMICONDUCTOR CYT5551HCD type consists of two (2) isolated NPN high current silicon transistors packaged in an epoxy molded SOT-228 surface mount case. Manufactured by the epitaxial planar process, this SUPERmini™ device is ideal for high current applications. MARKING CODE: FULL PART NUMBER SOT-228 CASE MAXIMUM RATINGS: (TA=25°C) Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Power Dissipation Operating and Storage Junction Temperature Thermal Resistance TJ,Tstg ΘJA -65 to +150 62.5 °C °C/W SYMBOL VCBO VCEO VEBO IC PD 180 160 6.0 1.0 2.0 UNITS V V V A W www.DataSheet4U.
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