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CZT853 Datasheet Surface Mount Silicon High Current NPN Transistor

Manufacturer: Central Semiconductor

Overview: CZT853 SURFACE MOUNT SILICON HIGH CURRENT NPN TRANSISTOR SOT-223 CASE w w w. c e n t r a l s e m i .

General Description

: The CENTRAL SEMICONDUCTOR CZT853 is a high current NPN silicon transistor manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for high voltage and high current amplifier applications.

MARKING: FULL PART NUMBER PNP plement: CZT953 MAXIMUM RATINGS: (TA=25°C) SYMBOL Collector-Base Voltage VCBO 200 Collector-Emitter Voltage VCEO 100 Emitter-Base Voltage VEBO 6.0 Continuous Collector Current IC 6.0 Power Dissipation (Note 1) PD 3.0 Operating and Storage Junction Temperature TJ, Tstg -65 to +150 Thermal Resistance ΘJA 41.7 Notes 1: FR-4 Epoxy PC Board with copper mounting pad area of 4in2 (minimum).

UNITS V V V A W °C °C/W ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted) SYMBOL TEST CONDITIONS MIN TYP ICBO VCB=150V ICBO VCB=150V, TA=100°C ICER VCE=150V, RBE≤1.0kΩ IEBO VEB=6.0V BVCBO IC=100μA 200 220 BVCER IC=10mA, RBE≤1.0kΩ 200 210 BVCEO IC=10mA 100 110 BVEBO IE=100μA 6.0 8.0 VCE(SAT) IC=100mA, IB=5.0mA 22 VCE(SAT) IC=2.0A, IB=100mA 135 VCE(SAT) IC=5.0A, IB=500mA VBE(SAT) IC=5.0A, IB=500mA hFE VCE=2.0V, IC=10mA 100 hFE VCE=2.0V, IC=2.0A 100 200 hFE VCE=2.0V, IC=4.0A 50 100 hFE VCE=2.0V, IC=10A 20 30 fT VCE=10V, IC=100mA, f=50MHz 190 Cob VCB=10V, IE=0, f=1.0MHz 38 MAX 10 1.0 10 10 50 170 340 1.25 300 UNITS nA μA nA nA V V V V mV mV mV V MHz pF R3 (11-December 2017) CZT853 SURFACE MOUNT SILICON HIGH CURRENT NPN TRANSISTOR SOT-223 CASE - MECHANICAL OUTLINE LEAD CODE: 1) Base 2) Collector 3) Emitter 4) Collector MARKING: FULL PART NUMBER w w w.

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