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CZT953 Datasheet Surface Mount Silicon High Current PNP Transistor

Manufacturer: Central Semiconductor

Overview: CZT953 SURFACE MOUNT SILICON HIGH CURRENT PNP TRANSISTOR w w w. c e n t r a l s e m i .

General Description

: The CENTRAL SEMICONDUCTOR CZT953 is a silicon high current PNP transistor manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for high voltage and high current amplifier applications.

MARKING: FULL PART NUMBER SOT-223 CASE MAXIMUM RATINGS: (TA=25°C) SYMBOL Collector-Base Voltage VCBO Collector-Emitter Voltage VCEO Emitter-Base Voltage VEBO Continuous Collector Current IC Power Dissipation (Note 1) PD Operating and Storage Junction Temperature TJ, Tstg Thermal Resistance ΘJA Note 1: FR-4 Epoxy PC Board with copper mounting pad area of 4in2 (minimum).

140 100 6.0 5.0 3.0 -65 to +150 41.7 UNITS V V V A W °C °C/W ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted) SYMBOL TEST CONDITIONS MIN TYP ICBO VCB=100V ICBO VCB=100V, TA=100°C ICER VCE=100V, RBE≤1.0kΩ IEBO VEB=6.0V BVCBO IC=100μA 140 170 BVCER IC=10mA, RBE≤1.0kΩ 140 150 BVCEO IC=1.0mA (Note 2) 100 120 BVEBO IE=100μA 6.0 9.0 VCE(SAT) IC=100mA, IB=10mA 20 VCE(SAT) IC=1.0A, IB=100mA 90 VCE(SAT) IC=2.0A, IB=200mA 170 VCE(SAT) IC=4.0A, IB=400mA 320 VBE(SAT) IC=4.0A, IB=400mA 1.0 hFE VCE=1.0V, IC=10mA 100 hFE VCE=1.0V, IC=1.0A 100 200 hFE VCE=1.0V, IC=3.0A 50 70 hFE VCE=1.0V, IC=4.0A 30 45 hFE VCE=1.0V, IC=10A 15 fT VCE=10V, IC=100mA, f=50MHz 150 Cob VCB=10V, IE=0, f=1.0MHz 45 Note 2: Pulse Test: Pulse Width = 100μs MAX 50 1.0 50 10 140 50 120 220 420 1.2 300 UNITS nA μA nA nA V V V V mV mV mV mV V MHz pF R6 (11-December 2017) CZT953 SURFACE MOUNT SILICON HIGH CURRENT PNP TRANSISTOR SOT-223 CASE - MECHANICAL OUTLINE LEAD CODE: 1) Base 2) Collector 3) Emitter 4) Collector MARKING: FULL PART NUMBER w w w.

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