DESCRIPTION
: TM Semiconductor Corp. SOT-223 CASE MAXIMUM RATINGS
: (TA=25°C) SYMBOL Collector-Base Voltage VCBO Collector-Emitter Voltage Emitter-Base Voltage Collector Current Power Dissipation Operating and Storage Junction Temperature Thermal Resistance VCEO VEBO IC PD TJ,Tstg ΘJA 450 450 6.0 500 2.0 -65 to +150 62.5 UNITS V V V mA W °C °C/W ELECTRICAL CHARACTERISTICS
: (TA=25°C unless otherwise noted) SYMBOL TEST CONDITIONS MIN TYP ICBO VCB=400V IEBO BVCBO BVCEO BVEBO VCE(SAT) VCE(SAT) VCE(SAT) VBE(SAT) hFE hFE hFE hFE fT Cob Cib VBE=4.0V IC=100µA IC=1.0mA IE=10µA IC=1.0mA, IB=0.1mA IC=10mA, IB=1.0mA IC=50mA, IC=10mA, IB=5.0mA IB=1.0mA 40 50 45 25 20 35 120 0.15 450 450 6.0 500 490 9.7 MAX 100 100 UNITS nA nA V V V 0.20 0.30 0.50 1.0 200 V V V V VCE=10V, IC=1.0mA VCE=10V, IC=10mA VCE=10V, IC=50mA VCE=10V, IC=100mA VCE=10V, IC=10mA, f=10MHz VCB=20V, IE=0, f=1.0MHz VEB=0.5V, IC=0, f=1.0MHz MHz 7.0 130 pF pF R1 ( 14-June 2001) Central TM CZTA96 SURFACE MOUNT PNP SILICON EXTREMELY HIGH VOLTAGE TRANSISTOR Semiconductor Corp.
Central Semiconductor
