Central Semiconductor D40C7
The CENTRAL SEMICONDUCTOR D40C7 type is an NPN silicon Darlington power transistor designed for general purpose amplifier applications where high gain is required.D40C7 Specifications
- Max Collector Current : 500mA
- Terminals : 3
- Collector Emitter Voltage : 50V
- Max Power Dissipation : 6.2W
- Max Operating Temp : 150°C
Source:
Octopart
DESCRIPTION
: MARKING: FULL PART NUMBER TO-202 CASEMAXIMUM RATINGS
: (TC=25°C) Collector-Emitter Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Peak Collector Current Power Dissipation Operating and Storage Junction Temperature Thermal Resistance SYMBOL VCES VCEO VEBO IC ICM PD TJ, Tstg ΘJC 50 50 13 0.5 1.0 6.25 -55 to +150 20ELECTRICAL CHARACTERISTICS
: (TC=25°C unless otherwise noted) SYMBOL TEST CONDITIONS MIN TYP ICES VCE=50V ICBO VCE=50V, TC=150°C IEBO VEB=13V BVCEO lC=10mA 50 VCE(SAT) lC=500mA, IB=0.5mA VBE(SAT) lC=500mA, IB=0.5mA hFE VCE=5.0V, IC=200mA 10K fT VCE=5.0V, lC=20mA 80 Ccb VCB=10V, f=1.0MHz ton lC=1.0A, IB1=1.0mA 120 toff lC=1.0A, IB1=IB2=1.0mA 1200 MAX 500 20 100 1.5 2.0 70K 10 UNITS V V V A A W °C °C/W UNITS nA μA nA V V V MHz pF ns ns R2 (23-January 2012) D40C7 NPN SILICON DARLINGTON POWER TRANSISTOR TO-202 CASE - MECHANICAL OUTLINE LEAD CODE: 1) Emitter 2) Base 3) Collector Tab is common to pin 3 MARKING: FULL PART NUMBER w w w.