D40C7
DESCRIPTION
: The CENTRAL SEMICONDUCTOR D40C7 type is an NPN silicon Darlington power transistor designed for general purpose amplifier applications where high gain is required.
MARKING: FULL PART NUMBER
TO-202 CASE
MAXIMUM RATINGS: (TC=25°C) Collector-Emitter Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Peak Collector Current Power Dissipation Operating and Storage Junction Temperature Thermal Resistance
SYMBOL VCES VCEO VEBO IC ICM PD TJ, Tstg ΘJC
50 50 13 0.5 1.0 6.25 -55 to +150 20
ELECTRICAL CHARACTERISTICS: (TC=25°C unless otherwise noted)
SYMBOL
TEST CONDITIONS
MIN TYP
ICES
VCE=50V
ICBO
VCE=50V, TC=150°C
IEBO
VEB=13V
BVCEO l C=10m A
VCE(SAT) l C=500m A, IB=0.5m A
VBE(SAT) l C=500m A, IB=0.5m A h FE VCE=5.0V, IC=200m A
10K f T VCE=5.0V, l C=20m A
Ccb VCB=10V, f=1.0MHz ton l C=1.0A, IB1=1.0m A
120 toff l C=1.0A, IB1=IB2=1.0m A
MAX 500 20 100
1.5 2.0 70K
UNITS V V V A A W °C
°C/W
UNITS n A μA n A V V V
MHz p F ns...
