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MCR718 - SURFACE MOUNT SILICON CONTROLLED RECTIFIERS

Download the MCR718 datasheet PDF. This datasheet also covers the MCR716 variant, as both devices belong to the same surface mount silicon controlled rectifiers family and are provided as variant models within a single manufacturer datasheet.

Description

The CENTRAL SEMICONDUCTOR MCR716 and MCR718 are epoxy molded SCRs designed for sensing circuit and control system applications.

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Note: The manufacturer provides a single datasheet file (MCR716-CentralSemiconductor.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
MCR718 Sensitive Gate Silicon Controlled Rectifiers(SCRs 4.0 AMPERES RMS 400 − 600 VOLTS) ON
MCR718T4 Sensitive Gate Silicon Controlled Rectifiers(SCRs 4.0 AMPERES RMS 400 − 600 VOLTS) ON
MCR71 SILICON CONTROLLED RECTIFIERS Digitron Semiconductors
MCR716 Sensitive Gate Silicon Controlled Rectifiers(SCRs 4.0 AMPERES RMS 400 − 600 VOLTS) ON
MCR716T4 Sensitive Gate Silicon Controlled Rectifiers(SCRs 4.0 AMPERES RMS 400 − 600 VOLTS) ON

Other Datasheets by Central Semiconductor

Part Number Description
MCR716 SURFACE MOUNT SILICON CONTROLLED RECTIFIERS
MCR703A SURFACE MOUNT SILICON CONTROLLED RECTIFIERS
MCR704A SURFACE MOUNT SILICON CONTROLLED RECTIFIERS
MCR706A SURFACE MOUNT SILICON CONTROLLED RECTIFIERS
MCR708A SURFACE MOUNT SILICON CONTROLLED RECTIFIERS

Full PDF Text Transcription

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MCR716 MCR718 SURFACE MOUNT SILICON CONTROLLED RECTIFIERS 4.0 AMP, 400 THRU 600 VOLT w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR MCR716 and MCR718 are epoxy molded SCRs designed for sensing circuit and control system applications. MARKING: FULL PART NUMBER DPAK CASE MAXIMUM RATINGS: (TC=25°C unless otherwise noted) SYMBOL Peak Repetitive Off-State Voltage VDRM, VRRM RMS On-State Current (TC=85°C) IT(RMS) Peak non-Repetitive Surge Current (1/2 cycle Sine wave, 50Hz/60Hz) I2t Value for Fusing, t=10ms ITSM I2t Peak Gate Power, tp=1.0μs Average Gate Power Dissipation Peak Gate Current, tp=1.0μs Critical Rate of Rise of On-State Current PGM PG (AV) IGM di/dt Storage Temperature Junction Temperature Tstg TJ MCR716 MCR718 400 600 4.0 15 1.1 0.5 0.
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