The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
MPQ3906 PNP SILICON QUAD TRANSISTOR
w w w. c e n t r a l s e m i . c o m
DESCRIPTION: The CENTRAL SEMICONDUCTOR MPQ3906 type is comprised of four independent PNP silicon transistors mounted in a 14-pin DIP, designed for general purpose amplifier and switching applications.
MARKING: FULL PART NUMBER
TO-116 CASE
MAXIMUM RATINGS: (TA=25°C) Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Power Dissipation (per transistor) Power Dissipation (total package) Operating and Storage Junction Temperature
SYMBOL VCBO VCEO VEBO IC PD PD TJ, Tstg
40 40 5.0 200 500 2.0 -65 to +150
ELECTRICAL CHARACTERISTICS PER TRANSISTOR: (TA=25°C)
SYMBOL TEST CONDITIONS
MIN TYP
ICBO
VCB=30V
IEBO
VEB=4.0V
BVCBO
IC=10μA
40
BVCEO
IC=1.
MPQ3906 Datasheet
