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MPS3394 - SILICON NPN TRANSISTORS

Download the MPS3394 datasheet PDF. This datasheet also covers the MPS3392 variant, as both devices belong to the same silicon npn transistors family and are provided as variant models within a single manufacturer datasheet.

General Description

The CENTRAL SEMICONDUCTOR MPS3392 series devices are silicon NPN transistors designed for small signal amplifier and low power audio applications.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (MPS3392-CentralSemiconductor.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
MPS3390 AMPLIFIER TRANSISTOR Motorola
MPS3392 (MPS3392 / MPS3393) NPN Small Signal General Purpose Amplifiers Fairchild Semiconductor
MPS3393 (MPS3392 / MPS3393) NPN Small Signal General Purpose Amplifiers Fairchild Semiconductor
MPS3330 Fixecd PLL synthesizer BOWEI
MPS3150 Fixecd PLL synthesizer BOWEI

Other Datasheets by Central Semiconductor

Part Number Description
MPS3392 SILICON NPN TRANSISTORS
MPS3393 SILICON NPN TRANSISTORS
MPS3395 SILICON NPN TRANSISTORS
MPS3414 NPN SIlicon Transistor
MPS3415 NPN SIlicon Transistor

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
MPS3392 MPS3393 MPS3394 MPS3395 SILICON NPN TRANSISTORS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR MPS3392 series devices are silicon NPN transistors designed for small signal amplifier and low power audio applications. MARKING: FULL PART NUMBER TO-92 CASE MAXIMUM RATINGS: (TA=25°C) Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Power Dissipation Operating and Storage Junction Temperature Thermal Resistance SYMBOL VCBO VCEO VEBO IC PD TJ, Tstg JA 25 25 5.0 100 625 -65 to +150 200 UNITS V V V mA mW °C °C/W ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted) SYMBOL TEST CONDITIONS MIN ICBO VCB=18V IEBO VEB=5.0V BVCEO IC=1.0mA 25 Cob VCB=10V, f=1.0MHz MAX 100 100 3.