MPSA14
DESCRIPTION
: The CENTRAL SEMICONDUCTOR MPSA12 series devices are silicon NPN Darlington transistors, manufactured by the epitaxial planar process, designed for applications requiring extremely high gain.
MARKING: FULL PART NUMBER
TO-92 CASE
MAXIMUM RATINGS: (TA=25°C) Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Power Dissipation Operating and Storage Junction Temperature Thermal Resistance
SYMBOL VCBO VCES VEBO IC PD TJ, Tstg JA
MPSA12 MPSA13 MPSA14
- 30 30 20 30 30 10 500 625 -65 to +150 200
ELECTRICAL CHARACTERISTICS: (TA=25°C) SYMBOL TEST CONDITIONS
ICBO
VCB=15V
ICBO
VCB=30V
ICES
VCE=15V
IEBO
VEB=10V
BVCES
IC=100μA
VCE(SAT) IC=10m A, IB=10μA
VCE(SAT) IC=100m A, IB=100μA
VBE(ON)
VCE=5.0V, IB=10m A
VBE(ON)
VCE=5.0V, IB=100m A h FE VCE=5.0V, IC=10m A h FE VCE=5.0V, IC=100m A f T VCE=5.0V, IC=10m A, f=100MHz
MPSA12 MIN MAX
- 100 -- 100
- 100 20
- 1.0 -- 1.4 -20K ---
MPSA13 MIN MAX
-- 100 -- 100 30 -- 1.5 -- 2.0 5K...
