Champion Microelectronic CMP60N03LD13
N-Channel Trench Mosfet
| Part No. | CMP60N03LD13 |
|---|---|
| Datasheet | CMP60N03LD13 Download |
| Manufacturer |  Champion Microelectronic |
| Description | N-Channel Trench Mosfet |
| Buy | Stock & Price |
APPLICATIONS
VDSS 30V RDS(ON) Typ. 10.8mΩ ID 55AFEATURES
Low ON Resistance Low Gate Charge Peak Current vs Pulse Width Curve Inductive Switching Curves Improved UIS Ruggedness PIN CONFIGURATION SYMBOL D TO-252 Front View GATE SOURCE DRAIN G S 1 2 3 N-Channel MOSFETABSOLUTE MAXIMUM RATINGS
Rating Drain to Source Voltage (Note 1) Drain to Current ¡Ð ¡Ð ¡Ð Continuous Tc = 25¢J , VGS@10V (Note 2) Continuous Tc = 100¢J , VGS@10V (Note 2) Pulsed Tc = 25¢J , VGS@10V (Note 3) Continue Symbol VDSS ID ID IDM VGS PD dv/dt TJ, TSTG EAS TL TPKG IAS Value 30 50 Fig.3 Fig.6 ±20 52 0.5 3.0 -55 to 150 500 300 260 Fig.8 V W W/¢J V/ns ¢J mJ ¢J ¢J Unit V A Gate-to-Source Voltage ¡Ð Total Power Dissipation Derating Factor above 25¢J Peak Diode Recovery dv/dt (Note 4) Operating Junction and Storage Temperature Range Single Pulse Avalanche Energy L=1.1mH,ID=30 Amps Maximum Lead Temperature for Soldering Purposes Maximum Package Body for 10 seconds Pulsed Avalanche Rating THERMAL RESISTANCE Symbol RθJC RθJA...
