CMP60N03LD13 Datasheet | Champion Microelectronic

FEATURES Low ON Resistance Low Gate Charge Peak Current vs Pulse Width Curve Inductive Switching Curves Improved UIS Ruggedness PIN CONFIGURATION .. SYMBOL TO-252 Front View GATE SOURCE DRAIN 1 2 3 N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS Rating Drain to Source Voltage (Note 1) Drain to Current ¡Ð ¡Ð ¡Ð Continuous Tc = 25¢J , VGS@10V (Note 2) Continuous Tc = 100¢J , VGS@10V (Note 2) Pulsed Tc = 25¢J , VGS@10V (Note 3) Continue Symbol VDSS ID ID IDM VGS PD dv/dt TJ, TSTG EAS TL TPKG IAS Value 30 50 Fig.3 Fig.6 ±20 52 0.5 3.0 -55 to 150 500 300 260 Fig.8 V W W/¢J V/ns ¢J m J ¢J ¢J Unit V A Gate-to-Source Voltage ¡Ð Total Power Dissipation Derating Factor above 25¢J Peak Diode Recovery dv/dt (Note 4) Operating Junction and Storage Temperature Range Single Pulse Avalanche Energy L=1.1m H,ID=30 Amps Maximum Lead Temperature for Soldering Purposes Maximum Package Body for 10 seconds Pulsed Avalanche Rating THERMAL RESISTANCE Symbol RθJC RθJA RθJA Parameter Junction-to-case Junction-to-ambient (PCB Mount) Junction-to-ambient Min Typ Max 2.4 50 62 Units ¢J /W ¢J /W ¢J /W Test Conditions Water cooled heatsink, PD adjusted for a peak junction temperature of +150¢J Minimum pad area, 2-oz copper, FR-4 circuit board, double sided 1 cubic foot chamber, free air 2004/03/04 Preliminary Rev. 0.1 Champion Microelectronic Corporation Page 1 N-CHANNEL TRENCH MOSFET ORDERING INFORMATION Part Number CMP60N03LD13 Package TO-252 ELECTRICAL CHARACTERISTICS Unless otherwise specified, TJ = 25¢J . .. Characteristic OFF Characteristics Symbol VDSS £G VDSS/∆TJ IDSS Min 30 Typ Max Units V Drain-to-Source Breakdown Voltage (VGS = 0 V, ID = 250 £g A) Breakdown Voltage Temperature Coefficient,Fig.11 (Reference to 25¢J , ID = 250 £g A) Drain-to-Source Leakage Current (VDS = 24 V, VGS = 0 V, TJ = 25¢J ) (VDS = 24 V, VGS = 0 V, TJ = 125¢J ) Gate-to-Source Forward Leakage (VGS = 20 V) Gate-to-Source Reverse Leakage (VGS = -20 V) ON...