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CMT35N03G - 25V N-CHANNEL ENHANCEMENT-MODE MOSFET

Key Features

  • ‹ ‹ ‹ Advanced trench process technology High Density Cell Design For Ultra Low On-Resistance Fully Characterized Avalanche Voltage and Current PIN.

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Datasheet Details

Part number CMT35N03G
Manufacturer Champion Microelectronic
File Size 254.81 KB
Description 25V N-CHANNEL ENHANCEMENT-MODE MOSFET
Datasheet download datasheet CMT35N03G Datasheet

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CMT35N03G 25V N-CHANNEL ENHANCEMENT-MODE MOSFET APPLICATION ‹ ‹ ‹ Vds=25V RDS(ON)=8.5 mΩ (Max.) , VGS @10V, Ids@30A RDS(ON)=13 mΩ (Max.), VGS @4.5V, Ids@30A FEATURES ‹ ‹ ‹ Advanced trench process technology High Density Cell Design For Ultra Low On-Resistance Fully Characterized Avalanche Voltage and Current PIN CONFIGURATION TO-252 SYMBOL D Front View GATE SOURCE DRAIN G S 1 2 3 N-Channel MOSFET Maximum Ratings and Thermal Characteristics (TA=25℃ unless otherwise notes) Rating Drain - Source Voltage www.DataSheet4U.com Symbol VDS VGS ID IDM TA=25℃ TA=75℃ PD PD TJ / TSTG RθJC 2) Value 25 ±20 30 260 60 23 -55 to150 1.