CMT35N03G Datasheet | Champion Microelectronic

25V N-CHANNEL ENHANCEMENT-MODE MOSFET APPLICATION ‹ ‹ ‹ Vds=25V RDS(ON)=8.5 mΩ (Max.) , VGS @10V, Ids@30A RDS(ON)=13 mΩ (Max.), VGS @4.5V, Ids@30A Features ‹ ‹ ‹ Advanced trench process technology High Density Cell Design For Ultra Low On-Resistance Fully Characterized Avalanche Voltage and Current PIN CONFIGURATION TO-252 SYMBOL Front View GATE SOURCE DRAIN 1 2 3 N-Channel MOSFET Maximum Ratings and Thermal Characteristics (TA=25℃ unless otherwise notes) Rating Drain - Source Voltage .. Symbol VDS VGS ID IDM TA=25℃ TA=75℃ PD PD TJ / TSTG RθJC 2) Value 25 ±20 30 260 60 23 -55 to150 1.8 50 Unit V V A A W W ℃ ℃/W ℃/W Gate -Source Voltage...