CMT35N03G - 25V N-CHANNEL ENHANCEMENT-MODE MOSFET

Datasheet Summary

Features

Advanced trench process technology High Density Cell Design For Ultra Low On-Resistance Fully Characterized Avalanche Voltage and Current PIN.

Champion Microelectronic

📥 Download Datasheet

Datasheet Details

Part number	CMT35N03G
Manufacturer	Champion Microelectronic
File Size	254.81 KB
Description	25V N-CHANNEL ENHANCEMENT-MODE MOSFET
Datasheet	CMT35N03G Datasheet
Additional preview pages of the CMT35N03G datasheet.

📁 Similar Datasheet

CMT-453230NX - Common mode Choke Coil (MITSUMI)
CMT-555 - HIGH TEMPERATURE RANGE 555 TIMER (CISSOID)
CMT-7400 - Quad 2-Inputs NAND Gate (CISSOID)
CMT-7404 - Hex Inverter (CISSOID)
CMT-7408 - High-Temperature Quad 2-inputs AND Gate (CISSOID)
CMT-74132 - Quad 2-Input NAND Schmitt Trigger (CISSOID)
CMT-ANTARES - 5V Linear Voltage Regulator (CISSOID)
CMT-HADES2S - High Temperature Gate Driver (CISSOID)
CMT01N60 - Power MOSFET (Champion)
CMT02N60 - Power MOSFET (Champion)

Other Datasheets by Champion Microelectronic

CMT4953G - P-CHANNEL ENHANCEMENT MODE MOSFET
CMT60N03 - N-CHANNEL Logic Level Power MOSFET
CMT60N03G - N-CHANNEL Logic Level Power MOSFET
CMT60N06 - N-CHANNEL Logic Level Power MOSFET
CMT60N06G - N-CHANNEL Logic Level Power MOSFET

Full PDF Text Transcription

Click to expand full text

CMT35N03G 25V N-CHANNEL ENHANCEMENT-MODE MOSFET APPLICATION Vds=25V RDS(ON)=8.5 mΩ (Max.) , VGS @10V, Ids@30A RDS(ON)=13 mΩ (Max.), VGS @4.5V, Ids@30A FEATURES Advanced trench process technology High Density Cell Design For Ultra Low On-Resistance Fully Characterized Avalanche Voltage and Current PIN CONFIGURATION TO-252 SYMBOL D Front View GATE SOURCE DRAIN G S 1 2 3 N-Channel MOSFET Maximum Ratings and Thermal Characteristics (TA=25℃ unless otherwise notes) Rating Drain - Source Voltage www.DataSheet4U.com Symbol VDS VGS ID IDM TA=25℃ TA=75℃ PD PD TJ / TSTG RθJC 2) Value 25 ±20 30 260 60 23 -55 to150 1.

Published: Jan 27, 2010 |