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CMT10N10 - POWER FIELD EFFECT TRANSISTOR

General Description

This advanced MOSFET is designed to withstand high energy in avalanche and commutation modes.

The new energy efficient design also offers a drain-to-source diode with a fast recovery time.

Key Features

  • ! ! Avalanche Energy Specified Source-to-Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode Diode is Characterized for Use in Bridge Circuits IDSS and VDS(on) Specified at Elevated Temperature PIN.

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Datasheet Details

Part number CMT10N10
Manufacturer Champion
File Size 179.60 KB
Description POWER FIELD EFFECT TRANSISTOR
Datasheet download datasheet CMT10N10 Datasheet

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www.DataSheet4U.com CMT10N10 POWER FIELD EFFECT TRANSISTOR GENERAL DESCRIPTION This advanced MOSFET is designed to withstand high energy in avalanche and commutation modes. The new energy efficient design also offers a drain-to-source diode with a fast recovery time. Designed for high voltage, high speed switching applications in power supplies, converters and PWM motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional and safety margin against unexpected voltage transients.