HS1010E Overview
The HS1010E is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology.This high density process is especially tailored to minimize on-state resistance.
HS1010E Details
| Part number | HS1010E |
|---|---|
| Datasheet | HS1010E-ChengqiSemiconductor.pdf |
| File Size | 656.16 KB |
| Manufacturer | Chengqi Semiconductor |
| Description | N-Channel MOSFET |
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