Datasheet Details
| Part number | HS1010E |
|---|---|
| Manufacturer | Chengqi Semiconductor |
| File Size | 656.16 KB |
| Description | N-Channel MOSFET |
| Datasheet |
 HS1010E Datasheet
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| Part number | HS1010E |
|---|---|
| Manufacturer | Chengqi Semiconductor |
| File Size | 656.16 KB |
| Description | N-Channel MOSFET |
| Datasheet |
HS1010E Datasheet
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The HS1010E is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology.This high density process is especially tailored to minimize on-state resistance.
2.
RDS(ON)≦9mΩ@VGS=10V Super high density cell design